Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain Regions
A fabrication process for homo-junction brake tool bottom-gate (HJBG) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed, in which the a-IGZO section as source/drain (S/D) regions is induced into a low resistance state by coating a thin metal Al film and then performing a thermal annealing in oxygen, with the channel region prot